Dual-pattern optical 3D dimensioning

ABSTRACT

An optical dimensioning system includes one or more light emitting assemblies configured to project one or more predetermined patterns on an object; an imaging assembly configured to sense light scattered and/or reflected off the object, and to capture an image of the object while the patterns are projected; and a processing assembly configured to analyze the image of the object to determine one or more dimension parameters of the object. The light emitting assembly may include a single piece optical component configured for producing a first pattern and second pattern. The patterns may be distinguishable based on directional filtering, feature detection, feature shift detection, or the like. A method for optical dimensioning includes illuminating an object with at least two detectable patterns; and calculating dimensions of the object by analyzing pattern separate of the elements comprising the projected patterns. One or more pattern generators may produce the patterns.

FIELD OF THE INVENTION

The present disclosure relates generally to optical dimensioning, andmore particularly to dual-pattern optical 3D dimensioning.

BACKGROUND

In some examples, optical 3D dimensioning with structural lighttriangulation imaging (parallax) suffers accuracy loss introduced byvariations in relative positions and orientations of a projector, acamera, and a projector-camera pair. These variations can result fromthe thermal, structural, or other changes, such as component aging. Thedimensioning accuracy problem can be, in some examples partially solvedwith calibration, but the ultimate accuracy is still limited due to thenon-calibratable part of the variations, such as shock and vibration. Inaddition, temperature change of the system due to the ambienttemperature change or self-generated heat may affect the triangulargeometry. Temperature gradient change occurring due to the nonuniformheat-generating source and non-homogeneous heat dissipation may alsointroduce complex deformations to the triangular system geometry andindividual components. More specifically, changes in camera focusing anddistortion may directly contribute to the 3D dimensioning error.Additionally, such changes are difficult to control or correct withcalibration. Components of a camera module are usually made frommultiple materials with significantly different thermal expansioncoefficients (CTEs). For example, the materials may include siliconsensor with 3.5 ppm/C, glass lens 9 ppm/C, plastic parts >60 ppm/C. Sucha combination introduces challenges in compensating for the changes inpattern image positions on the image sensor introduced by the thermalexpansion.

Applicant has identified a number of deficiencies and problemsassociated with conventional housing and apparatuses for dimensioningdevices. Through applied effort, ingenuity, and innovation, many ofthese identified problems have been solved by developing solutions thatare included in embodiments of the present disclosure, many examples ofwhich are described in detail herein.

BRIEF SUMMARY

Accordingly, in at least one aspect, the present disclosure provides anassembly and system for optical dimensioning. It should be appreciatedthat embodiments of the present disclosure are not limited to theexplicit embodiments depicted herein. In this regard, the scope andspirit of the disclosure herein is not limited to the specificembodiments depicted.

In some example embodiments of the dimensioning assembly, thedimensioning assembly includes a camera module having one or more imagesensors and an imaging lens assembly. The example dimensioning assemblyfurther includes a light emitting assembly disposed near the cameramodule. The example dimensioning assembly further includes a singlepiece optical component, where the single piece optical componentcomprises a light collimator component orientated to receive light fromthe light emitting assembly and output collimated light. The singlepiece optical component further comprises a light splitter componentorientated to receive the collimated light and split the collimatedlight into a first light beam and a second light beam. The single pieceoptical component further comprises a first pattern generator componentorientated to produce a first pattern using the first light beam. Thesingle piece optical component further comprises a second patterngenerator component orientated to produce a second pattern using thesecond light beam. The example dimensioning assembly further comprises aprocessing system configured to detect positions of elements of thefirst pattern and detect positions of elements of the second pattern.

In some example embodiments of the dimensioning assembly, the firstpattern generator component comprises a first reflective beam bender anda first diffractive pattern generator; and the second pattern generatorcomponent comprises a second reflective beam bender; and a seconddiffractive pattern generator.

In some example embodiments of the dimensioning assembly, the singlepiece optical component is made of injection molding plastic or glass.

In some example embodiments of the dimensioning assembly, the lightemitting assembly comprises a mounted laser source module associatedwith a 45-degree rotated shape feature, and the light collimatorcomponent, the light splitter component, and the first pattern generatorproduce the first pattern, and wherein the light collimator component,the light splitter component, and the second pattern generator producethe second pattern, with the first pattern at a 90-degree shape featurerotation from the second pattern.

In some example embodiments of the dimensioning assembly, the firstpattern is associated with a first pattern orientation mask, and thesecond pattern is associated with a second pattern orientation mask, andwherein the first pattern generator and the second pattern generator areorientated to interlace the first pattern and the second pattern basedon a baseline offset.

In some example embodiments of the dimensioning assembly, the firstpattern and the second pattern are orientated to match a pattern pitch.In other example embodiments of the dimensioning assembly, the firstpattern and the second pattern are orientated based on an off-pitchoffset from a pattern pitch.

In some example embodiments of the dimensioning assembly, the firstpattern and the second pattern comprise a shared pattern, and whereinthe first pattern generator and the second pattern generator areorientated to interlace the first pattern and the second pattern basedon a baseline offset.

In some example embodiments of the dimensioning assembly, the firstpattern and the second pattern are associated with a complementeddual-pattern, the first pattern generator component and the secondpattern generator component orientated to project the first pattern andthe second pattern to form the complemented dual-pattern. In some suchexample embodiments of the dimensioning assembly, the first pattern andthe second pattern are associated with a shared pattern, wherein thefirst pattern is associated with a first pattern feature, and whereinthe second pattern is associated with a second pattern feature.

In at least another aspect, another example dimensioning assembly isprovided. The example dimensioning assembly includes a light emittingassembly. The example dimensioning assembly further includes a fullfield modulation mask disposed to modulate, into a random pattern, lightreceived from the light emitting assembly. The example dimensioningassembly further includes projecting optics comprising at least aprojection lens disposed to project the random pattern withoutduplication optical elements.

In some embodiments of the dimensioning assembly, the projecting opticsfurther comprises a field correction component. In some embodiments ofthe dimensioning assembly, the projecting optics further comprises auniform intensity distribution component.

In some embodiments of the dimensioning assembly, the dimensioningassembly further comprises a camera module having one or more imagesensors and an imaging lens assembly; and a processing system configuredto detect and analyze positions of elements of the generated patterns.

In some embodiments of the dimensioning assembly, the random patterncomprises a binary state produced by a physical mask layer or amodulation scheme. In some such embodiments, each feature of the binarystate random pattern is associated with an elongated line orientation.

In some embodiments of the dimensioning assembly, the random patterncomprises a multi-state random pattern comprising features associatedwith at least three states. In some such embodiments of the dimensioningassembly, each feature state of the multi-state random pattern isassociated with a different feature position shift.

In at least another aspect, a computer-implemented method of analyzing adual-pattern is provided. The computer-implemented method may beperformed by computing hardware described herein, for example by aprocessing system. The computer-implemented method comprises projectinga full-field dual-pattern to a full projection field, the full-fielddual-pattern comprising a full-field left pattern and a full-field rightpattern associated with a baseline offset. The computer-implementedmethod further includes detecting the full-field left pattern using afirst directional filter. The computer-implemented method furtherincludes detecting the full-field right pattern using a seconddirectional filter. The computer-implemented method further includesdimensioning an object included in the full projection field based onthe detected full-field left pattern, the detected full-field rightpattern, and the baseline offset.

In some embodiments of the computer-implemented method, the full-fieldleft pattern comprises left features associated with a left feature typeand the full-field right pattern comprises right features associatedwith a right feature type, the first directional filter matches the leftfeature type, and the second directional filter matches the rightfeature type. In some embodiments of the computer-implemented method,dimensioning the object comprises identifying a portion of thefull-field left pattern; identifying a portion of the full-field rightpattern matching the portion of the full-field left pattern; determininga dimensioning offset between features of the portion of the full-fieldleft pattern and features of the portion of the full-field rightpattern; and calculating the dimensioning parameters based on thedimensioning offset and the baseline offset. In some such embodiments ofthe computer-implemented method, identifying the portion of thefull-field right pattern matching the features of the portion of thefull-field left pattern comprises determining an left encoded patternfor the portion of the full-field left pattern; and detecting, using alocal area coded feature matching algorithm, the portion of thefull-field right pattern representing a right encoded pattern, whereinthe left encoded pattern matches the right encoded pattern.

In some embodiments of the computer-implemented method, the baselineoffset is associated with a fixed pitch grid.

In some embodiments of the computer-implemented method, dimensioning theobject comprises detecting a left local area pattern portion and a rightlocal area pattern portion using a local area pattern correlationalgorithm, wherein a left feature set of the left local area patternportion corresponds to a right feature set of the right local areapattern portion; determining a dimensioning offset between the leftfeature set of the left local area pattern portion and the right featureset of the right local area pattern portion; and calculating thedimensioning parameters based on the dimensioning offset and thebaseline offset.

In at least another aspect, an example apparatus for analyzing adual-pattern is provided. The example apparatus comprises at least oneprocessor and at least one memory. The at least one memory storescomputer-coded instructions therein. The computer-coded instructions, inexecution with the at least one processor, configure the apparatus toproject a full-field dual-pattern to a full projection field, thefull-field dual-pattern comprising a full-field left pattern and afull-field right pattern associated with a baseline offset. The exampleapparatus is further configured to detect the full-field left patternusing a first directional filter. The example apparatus is furtherconfigured to detect the full-field right pattern using a seconddirectional filter. The example apparatus is further configured todimension an object included in the full projection field based on thedetected full-field left pattern, the detected full-field right pattern,and the baseline offset.

In some embodiments of the apparatus, the full-field left patterncomprises left features associated with a left feature type and thefull-field right pattern comprises right features associated with aright feature type, the first directional filter matches the leftfeature type, and the second directional filter matches the rightfeature type.

In some embodiments of the apparatus, to dimension the object, theapparatus is configured to identify a portion of the full-field leftpattern; identify a portion of the full-field right pattern matching theportion of the full-field left pattern; determine a dimensioning offsetbetween features of the portion of the full-field left pattern andfeatures of the portion of the full-field right pattern; and calculatethe dimensioning parameters based on the dimensioning offset and thebaseline offset.

In some such embodiments of the apparatus, to identify the portion ofthe full-field right pattern matching the features of the portion of thefull-field left pattern, the apparatus is configured to determine anleft encoded pattern for the portion of the full-field left pattern; anddetect, using a local area coded feature matching algorithm, the portionof the full-field right pattern representing a right encoded pattern,wherein the left encoded pattern matches the right encoded pattern.

In some embodiments of the apparatus, the baseline offset is associatedwith a fixed pitch grid. Additionally or alternatively, in someembodiments of the apparatus to dimension the object, the apparatus isconfigured to detect a left local area pattern portion and a right localarea pattern portion using a local area pattern correlation algorithm,wherein a left feature set of the left local area pattern portioncorresponds to a right feature set of the right local area patternportion; determine a dimensioning offset between the left feature set ofthe left local area pattern portion and the right feature set of theright local area pattern portion; and calculate the dimensioningparameters based on the dimensioning offset and the baseline offset.

In at least another aspect, a computer program product for analyzing adual-pattern is provided. The computer program product comprises atleast one non-transitory computer-readable storage medium havingcomputer program instructions thereon. The computer programinstructions, when in execution with a processor, are configured toproject a full-field dual-pattern to a full projection field, thefull-field dual-pattern comprising a full-field left pattern and afull-field right pattern associated with a baseline offset. The computerprogram product is further configured to detect the full-field leftpattern using a first directional filter. The computer program productis further configured to detect the full-field right pattern using asecond directional filter. The computer program product is furtherconfigured to dimension an object included in the full projection fieldbased on the detected full-field left pattern, the detected full-fieldright pattern, and the baseline offset.

In some embodiments of the computer program product, the full-field leftpattern comprises left features associated with a left feature type andthe right pattern comprises right features associated with a rightfeature type, where the first directional filter matches the leftfeature type, and where the second directional filter matches the rightfeature type.

In some embodiments of the computer program product, to dimension theobject, the computer program product is configured to identify a portionof the full-field left pattern; identify a portion of the full-fieldright pattern matching the portion of the full-field left pattern;determine a dimensioning offset between features of the portion of thefull-field left pattern and features of the portion of the full-fieldright pattern; and calculate the dimensioning parameters based on thedimensioning offset and the baseline offset.

In some such embodiments of the computer program product, to identifythe portion of the full-field right pattern matching the features of theportion of the full-field left pattern, the computer program product isconfigured to determine an left encoded pattern for the portion of thefull-field left pattern; and detect, using a local area coded featurematching algorithm, the portion of the full-field right patternrepresenting a right encoded pattern, wherein the left encoded patternmatches the right encoded pattern.

In some embodiments of the computer program product, the baseline offsetis associated with a fixed pitch grid.

In some embodiments of the computer program product, to dimension theobject, the computer program product is configured to detect a leftlocal area pattern portion and a right local area pattern portion usinga local area pattern correlation algorithm, wherein a left feature setof the left local area pattern portion corresponds to a right featureset of the right local area pattern portion; determine a dimensioningoffset between the left feature set of the left local area patternportion and the right feature set of the right local area patternportion; and calculate the dimensioning parameters based on thedimensioning offset and the baseline offset.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A schematically depicts a dimensioning assembly, according to anexample embodiment;

FIG. 1B schematically depicts a dual pattern produced by thedimensioning assembly, according to an example embodiment;

FIGS. 2A-2D schematically depict relative positions of a camera moduleand pattern generators within a dimensioning assembly, according toexample embodiments;

FIG. 3A schematically depicts an optical dimensioning system, accordingto an example embodiment;

FIG. 3B schematically depicts an optical dimensioning system with asplitting lens according to an example embodiment;

FIG. 4 schematically depicts a method for dual-pattern opticaldimensioning, according to an example embodiment;

FIGS. 5A-5D depict various views of an example light emitting assemblyaccording to an example embodiment;

FIGS. 6A-6C depict various views of a single piece optical componentaccording to an example embodiment;

FIGS. 7A-7D depict various views of a single piece optical componentassociated with a light emitting assembly to product a first pattern anda second pattern according to an example embodiment;

FIGS. 8A and 8B depict various views of an apparatus utilizing a singlepiece optical component associated with a light emitting assemblyaccording to an example embodiment;

FIG. 9A depicts an example apparatus for non-repeating full fieldprojection according to an example embodiment;

FIG. 9B depicts an example method for non-repeating full fieldprojection according to an example embodiment;

FIGS. 10A and 10B depict example patterns according to exampleembodiments;

FIGS. 11A and 11B depict example parameters and margins for randompatterns according to example embodiments;

FIGS. 12 and 13 depicts example patterns and corresponding interlaceddual-patterns according to an example embodiment;

FIG. 14 depicts other example patterns and example correlateddual-pattern according to an example embodiment;

FIG. 15 depicts other example patterns and example correlateddual-pattern according to an example embodiment; and

FIGS. 16 and 17 depict other example patterns and an example interlaceddual-pattern associated with a pattern grid, according to exampleembodiments.

DETAILED DESCRIPTION

The present disclosure now will be described more fully hereinafter withreference to the accompanying drawings in which some, but not all,embodiments of the disclosure are shown. Indeed, embodiments of thedisclosure may be embodied in many different forms and should not beconstrued as limited to the embodiments set forth herein; rather, theseembodiments are provided so that this disclosure will satisfy applicablelegal requirements. Like numbers refer to like elements throughout. Asused herein, positional terms may be used in examples to describe therelative position of certain components or portions of components.Furthermore, as would be appreciated to one of ordinary skill in the artin light of the present disclosure, the terms “substantially” and“approximately” indicate that the referenced element or associateddescription is accurate to within applicable engineering tolerances.

Overview

Projectors and corresponding detection systems may utilize structuredlight for various 3D sensing applications. For example, structured lightmay be produced and projected into a field to enable dimensioning of anobject within the field. Such systems may utilize, in some examples, oneor more projectors for generating the structured light, one or morecameras for capturing the structured light, and processing circuitry forperforming one or more dimensioning algorithms (or other processes forother applications utilizing the structured light).

Depth parameters associated with dimension parameters of an object maybe calculated by analyzing a random pattern that is projected onto asurface. For example, depth information may be calculated from thecorrelation between the random pattern and a corresponding imagecaptured by an image capture device. To better improve the matchingprocess, the projected pattern may be unique or semi-unique to preventmismatching of the pattern due to repeated patterns.

Embodiments of the present disclosure produce a non-repeating full fieldpattern that improves and/or otherwise contributes to the aforementionedmatching process. In some examples, a non-repeating full field patternis projected over a full projection field, such that no segment of thenon-repeating full field pattern is repeated throughout the fullprojection field. In some embodiments, a full field area modulation maskmay be used to generate the random pattern. The full field areamodulation mask may be modulated such that it is associated with aparticular state, for example a binary-state mask or a multi-state mask.Such embodiments may reduce mismatching, improve robustness of theoverall system, and simplify the optical structure of the system tominimize manufacture cost and improve manufacturer stability.

Dual-pattern systems may also be utilized to further improve projectionaccuracy, stability, and matching. Dual-pattern systems may beconstructed to avoid problems in pattern distinguishing and matching. Inthis regard, distinguishing between the dual-patterns generated by thedual pattern system may be difficult due to overlap or other projectionproblems due to component wear, misalignment, or the like. For example,where two projectors and/or pattern generators are used, the system maybe improved using configurations to produce patterns that aredistinguishable in spite of projection errors such as pattern overlap.

Embodiments of the present disclosure utilize a single piece opticalcomponent to generate dual patterns. The single piece optical component,in some embodiments, includes a single projector optics and a lightemitting assembly. In some embodiments, the light emitting assembly mayinclude a single light generation source used to produce two patterns.In other embodiments, the light emitting assembly may include multiplelight generation sources used to produce one or both patterns. In otherembodiments, the single piece optical component may be configured toreceive light from multiple light emitting assemblies. The single pieceoptical component, in some embodiments, comprises a light collimator,beam splitter, beam benders, and pattern generators. The single pieceoptical component, in some embodiments, is associated with a lightemitting apparatus for generating light beams used to produce dualpatterns.

The dual pattern systems, for example comprising a single piece opticalcomponent, may output particular patterns coded for improved alignmentand to avoid unwanted overlap. The particular patterns may be designedsuch that the patterns may still function with potential overlap betweenfeatures. For example, in some embodiments, the two patterns may form adual-pattern. In other examples, the two patterns may be identicalpatterns interlaced to form an interlaced dual-pattern.

In yet further example embodiments, the two patterns may form acomplementary dual-pattern. For example, in some embodiments, a first,left pattern is produced that includes features of a first, left featuretype, and a second right pattern is produced that includes features of asecond, right feature type. The left and right feature types may beseparately detectable, for example using directional filtering orspectral filtering with different filters. The filters may match theleft feature type and right feature type.

Embodiment apparatuses, systems, methods, or the like, may utilize asingle piece optical component for producing non-repeating full fielddual-patterns. Such embodiments improve accuracy and improve patternmismatching, improving overall system robustness. The simplifiedstructure may further lower cost while maintaining these advantages inpattern detection and analysis.

Example System Configurations, Apparatuses, and Implementations

In some examples, dual-pattern measurement allows for the extraction ofinformation based on a ratio of the image separation of the same pointfrom two or more patterns to the image distance between adjacent pointsfrom the same pattern. Such an approach may offer various benefits. Forexample, a camera can be at any location or orientation, and anyvariation in the relative position of the camera will not affect or willminimally affect the result of the measurements. Additionally, identicalpatterns with a predetermined separation can be generated from twoidentical projectors, or a single projector with a beam splitter. Twoidentical projecting assemblies can exhibit identical or almostidentical variations, which, in some examples, may not introducerelative positioning error. Indeed, results obtained with the singleprojector with a beam splitter can be free from minor pattern pairdifference contributions. Moreover, a dual-pattern image with knownpattern separation can produce a 3D dimensioning result regardless ofchanges in camera focusing, distortion and magnification. Change inimage position on the sensor introduced by thermal expansion may notaffect the outcome, as the result is the ratio of pattern imageseparation to the pattern image base feature.

Potential applications of 3D optical dimensioning system include but arenot limited to: object dimensioning to measure the length, width,height, volume, and irregularity, such as potential package damage in ashipment; zero contrast (surface profile only) direct product marking(DPM) barcode reading, including sensing with a mobile 3D sensor; 3Dcontour mapping for image recognition; and motion and gesture sensingfor non-contact user interface, e.g. in electronic equipment.

Additionally or alternatively, various pattern generation, detection,and decoding techniques may be utilized. For example, exampleembodiments disclosed herein may provide various detectable and/ordecodable patterns. Such patterns may include, without limitation,interlaced dual-patterns, complemented, identical dual-patterns, or thelike. Additionally or alternatively, embodiments may producenon-repeating full field patterns using to reduce or eliminateorientation errors during image capture and processing.

FIG. 1A shows a dimensioning assembly 100, according to an exampleembodiment. The assembly 100 includes a camera module 102 having one ormore image sensors and an imaging lens assembly. A first patterngenerator 104 is disposed proximate to the camera module 102. A secondpattern generator 110 is disposed near the camera module 102 and isspaced apart from the first pattern generator 104.

The assembly 100 may, additionally or alternatively in some embodiments,include or otherwise be associated with a processor system that isconfigured to detect and analyze positions of elements of the generatedpatterns. The processing system 116 can be configured to detect andanalyze positions of equivalent elements of the generated patterns.Additionally or alternatively, the processing system 116 can beconfigured to detect and analyze positions of adjacent elements of atleast one of the patterns. The assembly 100 can further include one ormore additional pattern generators disposed near the camera module 102.

In some examples, the first pattern generator includes, or is associatedwith, a first laser diode and a first pattern projection assembly.Similarly, in some examples, the second pattern generator includes, oris associated with, a second laser diode and a second pattern projectionassembly. In some embodiments, the first and/or second patternprojection assembly can include a projection lens and a pattern dieand/or a collimating lens and a diffractive optical element. The firstand the second pattern projection assemblies are, in some embodiments,configured to generate identical patterns. The first and/or second laserdiodes associated with each pattern generator can comprise avertical-cavity surface-emitting laser. Alternatively or additionally,in other embodiments, the first and/or second laser diodes associatedwith each pattern generator can comprise an edge-emitting laser.

In an example embodiment, the first and second pattern generators 104and 110, respectively, can be placed in a position that is equidistantfrom the camera module. In other embodiments, for example, the firstpattern generator and second pattern generators 104 and 110,respectively, can be placed in parallel, where the camera module isplaced at a point between the pattern generators. It should beappreciated that, in some embodiments, the camera module and/or firstand second pattern generators may be oriented such that the projectedpatterns are similarly projected (e.g., not distorted or similarlydistorted).

FIG. 1B shows an exemplary embodiment of a dual pattern 122 produced bythe dimensioning assembly 100. In some examples, a depth can becalculated based on the image separation of the same point from twoidentical patterns. Specifically:Depth=f(s/t),  (1)

-   -   where s is image separation of the same point from two patterns,        and t is image distance between adjacent points of the same        pattern (as shown in FIG. 1B).

FIGS. 2A-2D schematically depict relative positions of a camera module202 and pattern generators 204 within a dimensioning assembly, accordingto several embodiments. FIGS. 2A-2D show relative positions of thecamera module 202 and the patter generators 204 from the perspective oflooking down from a top onto the dimensioning assembly, with thepatterns being projected toward a bottom of the drawings; the horizontallines represent mounting surfaces.

In some embodiments, the camera module 202 and two or more patterngenerators 204 can be located on the same plane, whereas in otherembodiments, the camera module 202 and pattern generators 204 can belocated on different planes. For example, the camera module 202 can belocated on one plane, and the pattern generators 204 can be located on adifferent plane, which can be in front of the camera module 202 (FIG.2B), behind the camera module 202 (FIG. 2C), or a combination of infront of and behind (FIG. 2A). Alternatively, the camera module 202 canbe located on one plane and the pattern generators 204 can be located onone or more arcs, which can similarly be in front of the camera module202, behind it, or both (FIG. 2D). Two pattern generators 204 are shownin FIGS. 2A-2D for illustrative purposes; however some exampleembodiments may include a different number of pattern generators 204.

Although FIGS. 2A-2D show offsetting the pattern generators 204 from thecamera module 202 in the Y direction, in some embodiments they caninstead, or additionally, be offset in the X and/or Z directions. Mixedconfigurations where the pattern generators 204 are offset innon-symmetrical ways are also possible.

FIGS. 3A and 3B show exemplary embodiments of an optical dimensioningsystem 300. According to an embodiment, the system 300 includes one ormore light emitting assemblies 302. In some examples, light emittingassemblies 302 is configured to project a predetermined pattern on anobject. Additionally or alternatively, in some embodiments, the system300 includes an imaging assembly that is configured to sense lightscattered and/or reflected of the object, and to capture an image of theobject while the pattern is projected. Additionally or alternatively, insome embodiments, the system 300 includes a processing assembly that isconfigured to analyze the image of the object to determine one or moredimension parameters of the object.

In an embodiment, the imaging assembly can include one or more imagesensors with an imaging lens and/or a first beam splitter, for examplebeam splitter 308, adapted for multi-imaging sensing, and one or morespectral filters. The one or more light emitting assemblies 302 caninclude a pattern generator and a second beam splitter adapted forpattern projection. Additionally, the beam splitter can include, orotherwise be associated with, a relay lens 310 (shown in FIG. 3B). Sucha configuration may be used to reduce the size of the system, and can,in some examples, be beneficial for application with space limitation,such as mobile devices.

The optical dimensioning system 300 may thus be used to produce twopatterns, and project the patterns onto a field. The patterns may bespecially designed and/or configured to be analyzed, for example using adimensioning process, to enable accurate dimensioning of an objectwithin the field. For example, the patterns may be projected onto theobject within the field. The optical dimensioning system 300 may capturean image of the projected patterns, and analyze the image to calculate,determine, or otherwise identify dimension parameters associated withthe object. In an embodiment, the one or more dimension parameters ofthe object include a length, width, and/or height of the object. Inother embodiments, the system 300 may be used for various otherprocesses utilizing analysis of the projected patterns. In this regard,the patterns may be analyzed to calculate, determine, or otherwiseidentify particular depth information, encoded information, encodeddata, or the like. For example, the system 300 can be configured forscanning a zero contrast direct product marking barcode, imagerecognition with 3D contour mapping, and/or motion and/or gesturesensing for non-contact user interface.

FIG. 4 shows a method 400 for dual-pattern optical dimensioning,according to an embodiment. At 402, an object is illuminated with atleast two identical predetermined patterns projected by one or morepattern generators. In some embodiments, the predetermined patterns maybe projected by one or more of the apparatuses, systems, or devicesdescribed herein, for example with respect to FIG. 1, 3A, 3, or 7. At404, at least one image of the illuminated object is captured with acamera assembly. The camera assembly, in some embodiments for example,may be integrated with, or associated with the device, system,apparatus, or the like utilized to produce the two patterns. In otherembodiments, the camera assembly may be separate from said device,system, or apparatus. At 406, dimensions of the object are calculated byanalyzing pattern separation of the elements comprising the projectedpatterns. In this regard, for example, the captured image may beanalyzed to separate the two projected patterns, for example asdescribed below with respect to FIG. 12. The separated patterns ascaptured may then be used to calculate, determine, or otherwise identifythe dimensioning parameters of an object onto which the patterns wereprojected. For example, Formula 1 may be used to calculate theseparation and associated dimensioning parameters.

In an embodiment, the predetermined pattern can include a point grid.The method 400 can include controlling one or more pattern separationparameters. Additionally, illuminating an object at 402 can includeilluminating an object with a projector operably coupled to a beamsplitter.

The patterns may be processed in a myriad of ways, and in some contextsmay be analyzed via different methods depending on the features of eachof the generated patterns. For example, in some embodiments, thefeatures of the patterns may be encoded based on the shape of thefeature (e.g., a dot for 0 and an elongated line for 1), and imageprocessing feature filtering may be utilized to separate the patterns(e.g., using directional filtering). Additionally or alternatively, thefeatures of the patterns may be encoded using particular spectralfeatures, for example two patterns illuminated with different lightspectrums associated with differing colors, such that the patterns maybe identified using spectral filtering. In some embodiments, thepatterns may be projected associated with a grid pattern distribution,and the patterns may be separated using grid pattern searching andmatching to identify and separate the patterns. In this regard, thepatterns may be separated in a circumstance where the patterns areinterlaced and identical patterns. The patterns may be projected basedon the grid pattern such that each row of features are separated, forexample in a vertical direction, to enable improved identifying andseparating of the patterns. For example, for coded patterns, thepatterns may be searched and matched using one or more local area codedfeature matching algorithms. For patterns generated associated with afixed pitch grid pattern, the patterns may be identified and separatedusing grid searching and matching algorithms. For random distributedpatterns, the patterns may be identified and separated using local areapattern correlation to identify and/or separate the patterns.

In some embodiments, some of the operations described above with respectto the flow charts and/or data flows may be modified or furtheramplified. Furthermore, in some embodiments, additional optionaloperations may be included. Modifications, amplifications, or additionsto the operations above may be performed in any combination. In someembodiments, two or more steps of the flowcharts may be performedsimultaneously and/or in another order other than the particular orderdepicted.

Blocks of the block diagrams and flowchart illustrations supportcombinations of means for performing specified functions, combinationsof steps for performing the specified functions and program instructionmeans for performing the specified functions. It will also be understoodthat each block of the diagrams and flowcharts, and combinations of theblocks, can be implemented by special purpose hardware-based computersystems that perform the specified functions or steps, or combinations

FIGS. 5A-5D show an exemplary light emitting assembly 500. For example,FIG. 5A shows an example perspective view of the light emitting assembly500. FIG. 5B shows an example side view of the light emitting assembly500. FIG. 5C shows an example top view of the light emitting assembly500. FIG. 5D shows an example back view of the light emitting assembly500.

Light emitting assembly 500 comprises aperture 502. The aperture may beused for housing and/or mounting various components of the lightemitting assembly 500. In some embodiments, aperture 502 is embodied by,houses, or is associated with a heat-sink module. For example, theheat-sink module may embody the aperture 502 for distributing heatgenerated by components of the light emitting assembly 500, such as bythe light generation source 504.

Light emitting assembly 500 further comprises a light generation source504 which, in some examples, comprises one or more laser modules. Forexample, in some embodiments, light generation source 504 is embodied byan edge emitting laser diode. In other embodiments, light generationsource 504 is embodied by another laser diode type, LED, or the like. Inyet other embodiments, light generation source 504 is embodied byanother high-intensity light source. Indeed, light generation source 504may be one or more of any of a myriad of light sources, includingcoherent light generation source(s) and/or non-coherent light generationsources.

Light generation source 504 may be mounted to the aperture 502 forproducing a light beam at a particular angle, for example such that thelight produced by the light generation source has a particularorientation. For example, in some embodiments and as illustrated, thelight generation source 504 is mounted such that the light produced isat a 45-degree angle. The light generation source 504 may be designedand/or configured to generate light having a particular cross sectionfor use in projecting a corresponding pattern feature. For example, theexample light generation source 504 may produce a laser beam having anelliptical cross section, the laser particular cross section rotated ata 45-degree angle, for example with respect to one or more axes (e.g., amounting axis, or another axis associated with the aperture 502).

In some embodiments, the light generation source 504 may be utilized inone or more projection apparatuses, dimensioning apparatuses, or thelike. In some embodiments, only a single light generation source 504 maybe utilized. In other embodiments, a plurality of light generationsources, for example multiple of the light generations source 504, maybe utilized. It should be appreciated that in some embodiments, thelight generation source 504 may be utilized in combination with otherlight generation sources.

FIGS. 6A-6C illustrate an exemplary single piece optical component 600.For example, FIG. 6A shows an example perspective view of the singlepiece optical component 600. FIG. 6B shows an example frontal view ofthe single piece optical component 600. FIG. 6C illustrates an exampletop view of the single piece optical component 600. In some embodiments,the single piece optical component 600 is a component of a projectionapparatus, dimensioning apparatus, or light emitting assembly.

In some examples, single piece optical component 600 comprises a lightcollimator component 602. The light collimator component 602 may formincoming light into a light beam for generating patterns via the singlepiece optical component 600. Specifically, in some embodiments, thelight collimator component 602 is orientated to receive light from alight generation source, for example to receive a laser beam. In someembodiments, the light collimator component 602 produces collimatedlight, for example a particular collimated light beam, based on inputtedlight, for example from a light emitting assembly. In some embodiments,the particular collimated light beam has a particular cross-section orpattern feature based on the source light and/or the light collimatorcomponent 602. For example, in some embodiments the collimated lightbeam may be associated with an elliptical feature rotated at aparticular angle, such as a 45-degree angle.

Single piece optical component 600 further comprises a light splittercomponent 604. In some embodiments, the light splitter component 604 isorientated to receive light, for example such as a collimated lightbeam, produced or otherwise outputted from the light collimatorcomponent 602. The light splitter component 604 splits the receivedlight into two or more light beams. For example, the collimated lightmay be split into a first light beam and a second light beam, with eachlight beam produced at a particular angle towards a corresponding lightbeam bender.

In some embodiments, the light splitter component 604 comprises a beamsplitter, such as a grating beam splitter, a prism beam splitter, and/ormirrors beam splitter. The light splitter component 604 may, in someembodiments, alter orientation of the received light associated with adesired feature for corresponding patterns. For example, the lightsplitter component 604 may generate a first beam associated with thesame feature projection as the collimated light, and a second beamassociated with a second feature projection rotated 90-degrees from thefeature projection of the first beam.

Single piece optical component 600 further comprises a first beambender, for example left beam bender 606A, and a second beam bender, forexample right beam bender 606B. The first beam bender, and similarly thesecond beam bender may include components to, and/or otherwise bedesigned, to relay a received light beam to an associated patterngenerator. For example, each beam bender may include one or moremirrors, total internal reflection surfaces, relay optics, and/or thelike. In some embodiments, each beam bender comprises one or moreoptical components, or a combination of optical components, for relayingthe received light beam.

Single piece optical component 600 further comprises a first diffractivepattern generator, for example left pattern generator 608A, and a seconddiffractive pattern generator, for example right pattern generator 608B.Each diffractive pattern generator may be designed to receive a lightbeam and produce a corresponding pattern based on a received light beam.For example, left pattern generator 608A may generate a first, leftpattern and right pattern generator 608B may generate a second, rightpattern. In some embodiments, each diffractive pattern generator isconfigured to generate a pattern without use of a particular patternmask associated with the patterns.

In some embodiments, the left pattern and right pattern may be the same,shared pattern (e.g., an identical pattern). In some embodiments,features of the first pattern and features of the second pattern may belocated in the same positions, but the features of each pattern maydiffer in type, orientation, or the like. For example, the features ofthe first pattern may be rotated as compared to the features of thesecond pattern. In other embodiments, the first pattern includesfeatures of a first detectable type, orientation, or the like, which aredistinct from second features of a second detectable type, orientation,or the like associated with the second pattern. For example, the firstand second pattern may be embodied by any one, or pair, of the patternsdescribed below with respect to FIGS. 10A-10B, and 12A/12B-17.

Additionally or alternatively, in some embodiments, each patterngenerator may include projection optics, for example including one ormore projection lenses, for producing the corresponding pattern. Thefirst pattern generator 608A and the second pattern generator 608B maybe spaced apart by a predetermined separation distance. Additionally oralternatively, the first pattern generator 608A and the second patterngenerator 608B may be orientated to produce the first pattern and secondpattern to form a dual-pattern, as described herein.

Single piece optical component 600 may be constructed from one or amyriad of materials. A suitable material may be selected based on adesired stability requirement and operating temperature range. In someembodiments, for example, the single piece optical component 600 isconstructed of injection molding plastic. In other embodiments, forexample, the single piece optical component 600 is constructed of glass.The single piece optical component 600 may be constructed of any of amyriad of materials depending on a target stability.

FIGS. 7A-7D illustrate various views of an apparatus comprising a singlepiece optical component associated with a light emitting assembly inoperation. For example, FIG. 7A shows an example perspective view of asingle-piece dual-pattern projection apparatus 700 comprising the singlepiece optical component 600 in operation with an example light emittingassembly 500. FIG. 7B shows an example frontal view of the single-piecedual-pattern projection apparatus 700. FIG. 7C illustrates an exampletop view of the single-piece dual-pattern projection apparatus 700. FIG.7D illustrates example light beams associated with pattern generationvia the example projection apparatus 700, for example for use in one ormore generated patterns. In some embodiments, the single-piecedual-pattern projection apparatus 700 embodies, or embodies a componentof, a projection apparatus, dimensioning apparatus, or light emittingassembly, as described above.

Specifically, in some examples, single piece optical component 600receives light 702. For example, the light 702 may be produced by thelight emitting assembly 500. In a particular embodiment, for example,702 may comprise a laser beam produced by light emitting assembly 500via a light generation source, for example via an edge emitting diode.Further in some embodiments, the light emitting assembly 500 may besecured to, or integrated with, the single piece optical component 600.Additionally, in some embodiments, the light emitting assembly 500 isorientated in a particular manner, for example to produce light at acertain angle with respect to single piece optical component 600 or acomponent thereof. In other embodiments, alternative and/or additionalmodules, components, assemblies, and/or light sources may produce light702. The light 702 may be received by the single piece optical component600 via a light collimator component, for example light collimatorcomponent 602.

Light collimator component 602 may receive the light 702 and producecollimated light based on the received light. In some embodiments, thelight splitter component 602 is orientated such that the collimatedlight produced or otherwise outputted by the light collimator component602 is received by another component of the single piece opticalcomponent 600, for example a light splitter component. The collimatedlight may be received by the light splitter component 604 for splittinginto two or more beams. As illustrated, for example, the collimatedlight may be split into a first, left light beam 704A, and a second,right light beam 704B. In some embodiments, the light splitter component604 produces the first, left light beam 704A and second, right lightbeam 704B such that the two beams are offset, for example via rotation,by a predetermined angle based on the design and/or orientation of thelight splitter component 604. For example, the left light beam 704A andthe right light beam 704B may be associated with cross-sections rotated90-degrees from one another.

The light splitter component 604, in some embodiments, is orientatedsuch that the light beams produced by the light splitter component 604are received via corresponding pattern generation components to produceparticular patterns. For example, as illustrated, single piece opticalcomponent 600 comprises a left reflective beam bender 606A and a leftpattern generator 608A. The light splitter component 604 may beorientated such that the left light beam 704A is received via the leftreflective beam bender 606A and relayed to the left pattern generator608A. The left pattern generator 608A may, for example, produce a first,left pattern utilizing, based on, or otherwise associated with, the leftlight beam 704A. For example, the features of the left pattern may beprojected based on the left light beam. For example, the left light beam704A may be associated with a particular cross-section defining afeature of the left pattern.

Similarly, single piece optical component 600 comprises a rightreflective beam bender 606B and a right pattern generator 608B. Thelight splitter component 604 may further be orientated such that theright light beam 704B is received via the right reflective beam bender606B and relayed to the right pattern generator 608B. The right patterngenerator 608B may, for example, generate a particular patternutilizing, based on, or otherwise associated with, the right light beam704B, such as a cross section of the right light beam 704B.

In this regard, for example, the left light beam 704A and the rightlight beam 704B may be altered based on one or more transformations. Forexample, a transformation may alter the orientation and/or cross-sectionof the left light beam 704A and/or right light beam 704B based on theorientation of the beam splitter 604, the orientation of the left beambender 606A, and/or the orientation of the right beam bender 606B. Forexample, the left light beam 704A may be associated with a leftelliptical cross section 710A defining a particular feature of the leftpattern. The right light beam 704B may be associated with a rightelliptical cross section 710B defining a particular feature of the rightpattern. The left elliptical cross section 710A and the right ellipticalcross section 710B may be utilized, respectively, by left patterngenerator 608A and right pattern generator 608B to generate thecorresponding pattern. It should be appreciated that the left light beam704A and/or right light beam 704B may appear to represent various othercross sections detectable via one or more algorithms, for example viaone or more directional filtering algorithms or other image processingalgorithms. In an example embodiment, for example, a left filter thatmatches the feature type of the left feature may be applied to detectthe left pattern. Similarly, a right filter that matches the featuretype of the right feature may be applied to detect the right pattern.

In some embodiments the left pattern generator 608A and right patterngenerator 608B may generate an interlaced dual-pattern. The left andright patterns may be interlaced based on a rectangular grid pattern forseparating the left and right patterns. Specifically, the left and rightpatterns may be separated such that each row between the patterns isseparated by predetermined baseline offset in a vertical direction. Inthis regard, the first row of the left pattern may be separated by thebaseline offset to the first row of the right pattern, and the first rowof the right pattern may be separated by the baseline offset to thesecond row of the left pattern, and so on. Thus, the left identicalpattern may be identified and separated based on the even rows of theinterlaced dual-pattern, for example, and the right pattern may beidentified based on the odd rows of the interlaced dual-pattern.

The apparatus 700 may project a left pattern and a right pattern onto aprojection field. In some embodiments, the left pattern and/or rightpattern may embody one or more non-repeating full field projectionpatterns projected onto a full projection field. Additionally oralternatively, the left and right pattern may be projected to form adual-pattern. In some embodiments, the apparatus 700 may be associatedwith an imaging assembly, camera, image capture apparatus, and/orprocessing circuitry for performing 3D object dimensioning. For example,the camera, imaging assembly, image capture apparatus, and/or processingcircuitry may be adapted for multi-imaging sensing, directionalfiltering, or application of other spectral filters.

The single piece optical component 600 in conjunction with a lightemitting apparatus 500, for example as depicted as apparatus 700,enables inclusion of such apparatuses in compact, space-constrainedenvironments, for example mobile devices and systems. In this regard,FIGS. 8A and 8B depict various views of an apparatus embodying a mobiledevice comprising a single piece optical component in operation with alight emitting assembly, for example as apparatus 700, according to anexample embodiment of the present disclosure. Specifically, asillustrated, FIGS. 8A and 8B depict a particular mobile apparatus, forexample mobile device 800. Mobile device 800 may embody any one of avariety of known computing devices, such as a smartphone, tablet,personal digital assistant or the like. Additionally, the mobile device800 may include additional circuitry, modules, components, or the likenot depicted (e.g., processing circuitry, memory, and the like). Forexample, in some embodiments, the mobile device 800 embodies a smartphone device enhanced via the apparatus 700.

The mobile device 800, as integrated and enhanced by the single-piecedual-pattern projection apparatus 700, may embody an object dimensioningapparatus configured to perform 3D dimensioning of an object. In thisregard, the mobile device 800 comprises a device frame 802. The deviceframe 802 may define a particular area forming the inside of the mobiledevice 800, and provide a surface for affixing, for example by securingand/or otherwise mounting, the various components, circuitry, and thelike associated with mobile device 800. The device frame 802 may beconstructed of any of a number of materials dependent on the requiredthermal, electro-magnetic or other structural requirements, for exampleglass, metal(s), and/or plastic(s).

The mobile device 800 comprises single-piece dual-pattern projectionapparatus 700. In some embodiments, the single-piece dual-patternprojection apparatus 700 is affixed, mounted, fastened, or otherwisesecured to the device frame 802. The single-piece dual-patternprojection apparatus 700 may be configured to produce one or moredual-pattern(s) for 3D object dimensioning, as described herein. In someembodiments, the single-piece dual-pattern projection apparatus 700 isconfigured to communicate with circuitry (not shown) of the mobiledevice 800 to activate and perform projection. Additionally, circuitryand/or components of the mobile device 800, such as a camera (notshown), may be utilized to capture the projected dual-pattern and/oranalyze the dual-pattern to perform a dimensioning process. It should beappreciated that, in other embodiments, the mobile device comprises adual-projector dual-pattern projection apparatus that is affixed,mounted, fastened, or otherwise secured to the device frame 802. In thisregard, the dual-projector dual-pattern projection apparatus may includetwo projector devices, each configured for projecting a full-fieldpattern of a particular dual-pattern. In such embodiments, the twoprojector devices may be configured to project the same pattern, ordifferent patterns, as described herein.

The device frame 802 may include one or more projector windows to enableprojection of the dual-patterns by the single-piece dual-patternprojection apparatus 700. For example, device frame 802 may includeprojector windows 804A and 804B. The projector windows 804A and 804B maydefine an open are of the device frame 802. The projector windows 804Aand 804B may be a predetermined size required for projecting thedual-patterns using single-piece dual-pattern projection apparatus 700without the device frame 802 impeding the projected pattern(s).

It should be appreciated that, in other embodiments, the single-piecedual-pattern projection apparatus 700 may be implemented into anothermobile device, apparatus, or the like. For example, an alternativehandheld device may include the single-piece dual-pattern projectionapparatus 700 for projecting a dual-pattern, such as for 3D objectdimensioning. Alternatively, in other embodiments, the single-piecedual-pattern projection apparatus 700 may further comprise, or otherwisebe associated with attachment means for mounting or affixing theapparatus 700 external to the mobile device 800. In this regard, theparticular apparatus depicted in FIGS. 8A and 8B is for illustration andnot meant to limit the scope or spirit of the disclosure herein.

FIG. 9A shows an example apparatus for non-repeating full fieldprojection. The non-repeating full field projection depicted may, forexample, include a random pattern for where the random pattern is notrepeated across the projection field. In some embodiments, a singlepiece optical component, for example single piece optical component 700depicted in FIG. 7 includes one or more apparatuses, or componentsthereof, for non-repeating full field projection. For example, theapparatus and/or components thereof may be included such that the first,left light pattern and/or second, right light pattern each comprise anon-repeating full field pattern. It should be appreciated that, inother embodiments, the mobile device comprises a dual-projectordual-pattern projection apparatus that is affixed, mounted, fastened, orotherwise secured to the device frame 802. In this regard, thedual-projector dual-pattern projection apparatus may include twoprojector devices, each configured for projecting a full-field patternof a particular dual-pattern. In such embodiments, the two projectordevices may be configured to project the same pattern, or differentpatterns, as described herein.

The example non-repeating full-field apparatus 900 comprises a lightgeneration source 902. The light generation source 902 may be configuredto produce a light, such as a light beam, for projection to andreceiving by the full field modulation mask 904 for modulation. In someembodiments, the light generation source 902 comprises a laser diodearray, a VCSEL array, and/or one or more intensity light source(s), or acombination thereof. In some embodiments, the light generation source902 comprises only a single high intensity light generation source,laser, or the like. In some embodiments, a coherent light generationsource is utilized, while in other embodiments a non-coherent lightgeneration source may be utilized.

The example apparatus 900 further comprises a non-repeating full fieldmodulation mask 904. The non-repeating full field modulation mask 904may be utilized to provide a random pattern for projection. In someembodiments, the random pattern is fully random, semi-random, orpseudo-random. For example, non-repeating full field modulation mask 904may receive the light provided by light generation source 902 andmodulate the received light to produce a random pattern associated withthe non-repeating full field modulation mask. The non-repeating fullfield modulation mask 904, in some examples, comprises a single maskwithout duplication optics, a lenslet array, or the like. For example,the non-repeating full field modulation mask 904, in some embodiments,is manufactured and/or otherwise constructed to define the particularrandom pattern. Full-field modulation mask 904 may improve thecomplexity and accuracy of image processing associated with detecting,separating, and/or analyzing the resulting pattern. Particularly, thenon-repeating nature of the non-repeating full field modulation mask mayeliminate potential mismatch caused by tile and/or sub-patternrepetition, and further may improve computing resources management byreducing or eliminating the need to allocate computing resources forsuch error detection and error handling. Apparatuses, systems, devicesand the like comprising the non-repeating full field modulation mask 904may have improved stability and, additionally or alternatively, may bemade at a lower cost.

The non-repeating full field modulation mask 904 may produce the randompattern, and be orientated such that projection optics 906 receives therandom pattern for projecting the random pattern. In some embodiments,projection optics 906 comprises at least one optical component forprojecting the random pattern onto an object. Additionally oralternatively, in some embodiments the projection optics 906 furthercomprises one or more additional optics components. For example, in someembodiments, the projection optics 906 further comprises a fieldcorrection optics element for correcting one or more field errors.Additionally or alternative, for example, the optical projection 908additionally or alternatively comprises a uniform intensity distributioncomponent. The uniform intensity distribution component may beconfigured to distribute the light such that the projected lightintensity associated with the pattern is distributed above a uniformitythreshold along the area of the pattern.

Various implementations may be used to implement the uniform intensitydistribution component. In some embodiments, for example, the uniformintensity distribution component may be implemented as a customizedaperture with a shape matching the lens assembly that introduces acontrolled vignetting of the incoming light. In this regard, thecustomized aperture may compensate for the non-uniformity of the lightdistribution, and thus decrease the risk that the non-uniform lightdistribution causes errors in capturing and analyzing the projectedpatterns. In other embodiments, for example, the uniform intensitydistribution component may comprise a light attenuator that compensatesfor the non-uniformity of the light distribution. For example, the lightattenuator may comprise a greyscale attenuator mask located between thelight generation source 902 and the non-repeating full field modulationmask 904. The greyscale distribution of the light attenuator may bespecially designed to compensate for the non-uniformity of the incominglight, and thus decrease the risk that the non-uniform lightdistribution causes errors in capturing and analyzing the projectedpatterns.

In some embodiments, the projection optics 906 produces the randompattern, for example, for projection to a projection field 908. Therandom pattern may represent a particular non-repeating full fieldpattern associated with the non-repeating full field modulation mask904. In this regard, the non-repeating full field pattern may bedesigned such that each captured area of the non-repeating full fieldmodulation mask is designed to be unique at and/or above a particularcapture size or window size. The unique pattern improves matching of thecaptured area to the corresponding location in the non-repeating fullfield pattern. In other words, in some embodiments, the non-repeatingfull field pattern may embody a unique pattern across the fullprojection field and not repeat a particular section or pattern snippetthroughout the entirety of the full projection field. In this regard,the placement of the features in the pattern may be unique, such thatsnippets of the pattern are not repeated throughout the remainder of thefull projection field.

It should be appreciated that, in at least some embodiments, thenon-repeating full field modulation mask 904 comprises a single maskassociated with producing a random pattern for non-repeating full fieldprojection. In this regard, the non-repeating full field modulation mask904 produces the random pattern without duplication optics, for examplewithout duplication optical elements and/or a lenslet array. In someembodiments, the non-repeating full field modulation mask 904, inconjunction with the projection lens, provides the random pattern acrossthe entirety of the projection field 908.

In other embodiments, one or more of the apparatus 900 may be used fordual-pattern projection over a full field. For example, in someembodiments, a dual-pattern projection apparatus may comprise twoidentical projectors, each embodied by the apparatus 900, configured toproject the two patterns into the full projection field to form adual-pattern. Similarly, in some embodiments, a dual-pattern projectionapparatus may comprise two projectors, with the second projectorconfigured to project a second pattern with features at a differentorientation from the first pattern (e.g., rotated 90 degrees). In otherembodiments, a dual-pattern projection apparatus may comprise theapparatus 900 and a corresponding beam splitter for generating the dualpatterns.

FIG. 9B shows a method 950 for non-repeating full field projection, inaccordance with an example embodiment. The method 950 may be performedby one or more of a myriad of systems, for example those depicted withrespect to FIG. 1, 2, 3, 7, or 9. In some embodiments, for example, theoperations of the method are performed by a non-repeating full fieldprojection apparatus, such as apparatus 900. In other embodiments, theoperations of the method are performed via a projection apparatus, suchas apparatus 700, for projecting a left pattern and/or a right pattern.

At 952, light is projected from a light generation source. In someembodiments, the light is one or more lasers generated by an edgeemitting diode laser, VSCEL, VSCEL array, or other high-intensitycoherent or non-coherent light generation source. In some embodiments,the light is projected in response to a hardware and/or software signalindicating initiation of projection.

At 954, the light is modulated via a non-repeating full field modulationmask. In some embodiments, the non-repeating full field modulation maskembodies a single mask associated with a particular random pattern. Therandom pattern, in some embodiments, may include randomly distributedfeatures such that any portion is not repeated throughout the remainderof the full projection field, such that each portion of the randompattern may be uniquely identifiable throughout the full projectionfield. In some embodiments, the non-repeating full field modulation maskis orientated to receive the light produced by the light generationsource.

The random pattern produced via the non-repeating full field modulationmask may be a non-repeating full field random pattern projected to theentirety of the full projection field. In this regard, the randompattern does not include sub-patterns, segments, or portions that arerepeated throughout the full projection field. Further, in this regard,each portion of the non-repeating full field random pattern may beunique from the remainder of the non-repeating full field randompattern. A captured portion of the pattern, for example captured by animager, camera, or other image capture device, is thus identifiable withcertainty as to where the captured portion is located within thenon-repeating full field random pattern. Advantageously, suchembodiments eliminate confusion over conventional arrangements,patterns, systems, or the like, where the pattern(s) includes repeatedinstances of a particular sub-pattern (e.g., M repetitions along alength axis and N repetitions along a width axis). Eliminating sucherrors improves the rate at which a dimensioning apparatus may functionby improving the efficiency and accuracy of localizing a capturedportion of the projected pattern, further improving the efficiency andaccuracy of a dimensioning system, device, or apparatus overall.

At 956, the random pattern is projected to the projection field. In someembodiments, the random pattern produced by the non-repeating full fieldmodulation mask is projected via a projection optics. The projectionoptics, in some embodiments, may include one or more lenses forprojecting the random pattern onto the full projection field. The randompattern may be projected to the projection field without use of use ofduplication optics, such that the random pattern associated with thenon-repeating full field modulation mask covers the projection field. Insome embodiments, the random pattern may be projected onto an object,for example as a part of a 3D dimensioning process.

FIGS. 10A and 10B depict example patterns, in accordance with exampleembodiments of the present disclosure. The example patterns may eachembody non-repeating full field random patterns produced via aprojection apparatus, such as single-piece dual-pattern projectionapparatus 700, or non-repeating full field projection apparatus 900. Theprovided example patterns are merely descriptive and not intended tolimit the scope and spirit of the disclosure herein.

FIG. 10A depicts an example binary state non-repeating full field randompattern 1002. The binary state non-repeating full field random pattern1002 includes features associated with two states. Specifically, thefeatures depicted utilize orientation of each feature to represent acorresponding value (e.g., horizontal may represent 0, vertical mayrepresent 1). For example, the features may correspond to orientationsof the aperture, such as where the features are determined based on theorientation of the light generation source of the aperture. As depictedin FIG. 5, for example, the orientation of the mounted light generationsource 504 may define the feature of the left pattern and/or rightpattern, or may be manipulated (such as through reflecting) to create afirst feature and a second feature (e.g., a mounted orientation and arotated orientation). The features may be detectable and/orinterpretable using a spectral filter and/or directional filteringalgorithms, or one or more other image processing algorithms. In thisregard, the pattern may be processed to determine a correspondingencoded pattern (e.g., a binary string patternized based on the featuresof the pattern).

The binary state non-repeating full field random pattern 1002 may covera full projection field without duplication of any portion of the randompattern. In a particular example embodiment, for example, the binarystate non-repeating full field random pattern may have a set size (e.g.,2.56 mm by 2.56 mm) that covers the entire full projection field. Thebinary state non-repeating full field random pattern may further beassociated with a particular number of cells and cell size, for example256 by 256 cells, each having a size of 10 micrometers by 10micrometers. It should be appreciated that, in other embodiments, thebinary state non-repeating full field random pattern 1002 may includedifferent features and/or a different pattern of features.

FIG. 10B depicts an example multi-state (as illustrated a “tertiarystate” or “3-state”) non-repeating full field random pattern 1052. Themulti-state non-repeating full field random pattern 1052 includesfeatures associated with three states. Specifically, the featuresdepicted utilize a shift amount from a center of the aperture or openingthereof to represent a corresponding value. For example, no shift (e.g.,centered) may represent zero, a first directional shift (e.g., a leftshift) may represent −1, and a second directional shift (e.g., a rightshift) may represent 1. The features may be detectable via a positionfilter, for example implemented via software, hardware, or a combinationthereof associated with a camera or other image capture device.Utilizing a horizontal shift, in some embodiments, the pattern may beinterlaced with a second projection of the pattern while minimizing therisk over overlap between the features of first and second pattern.Thus, the particular patterns reduce the risk of failures in patternidentification and separation during processing, and improve overallefficiency and accuracy of a dimensioning system, device, apparatus, orthe like.

In some embodiments, either of the non-repeating full field randompatterns may be created using a second round randomization. The secondround randomization may ensure the light intensity distribution isuniform, or otherwise above a threshold uniformity. In this regard, thesecond (and/or subsequent) randomization of the pattern may enhance thedistribution of the light intensity across the full projection field,such that all portions of the pattern are sufficiently uniform.

It should be appreciated that, in other embodiments, a multi-statenon-repeating full field random pattern may include features having anynumber of associated states. In this regard, the number of states forfeatures is not merely associated with two or three. For example, insome embodiments, a multi-state non-repeating full field random patternmay include features having any number of states, such as four or morestates. In some such embodiments, for example, feature rotation (such asaperture rotation, in the case of a physical mask, or a modulationscheme in a circumstance of software projection) may be used todifferentiate features of different states, with any number of rotationsbeing utilized to produce various features of various states.Additionally or alternatively, in some embodiments for example, featureposition shift (such as feature position shift in relation to a centerposition) may be used to differentiate features of different states,with any number of position shifts based on a particular measurableposition shift level being utilized to produce various features ofvarious states. In some embodiments, a parameter set may be used toproduce features associated with a particular state, or the parameterset may be used to produce features associated with various states.

FIGS. 11A and 11B depict tables illustrating example state numbers,names/descriptions, and various parameter sets as well as margins foreach parameter set. Further, FIG. 11B illustrates example margins fordetecting the random patterns illustrated and described above withrespect to FIGS. 10A and 10B respectively. In this regard, each “Binary”state row is associated with a binary non-repeating full field randompattern having vertical elongated and horizontal elongated features,similar to those of binary non-repeating full field random pattern 1002,based on the parameters described in each row. Similarly, each “3-State”row is associated with a particular multi-state pattern including orembodied by a tertiary non-repeating full field random pattern havingshifted features, similar to those of tertiary non-repeating full fieldrandom pattern 1052, based on the parameters described in each row.

As indicated by the table depicted in FIG. 11A, a binary non-repeatingfull field random pattern having the parameters of “edge” equal to 1micrometer, “r” equal to 1 micrometer, and “el” equal to 6 micrometersis associated with a margin of 15.5%. This margin increases to 19.2% fora binary non-repeating full field random pattern having the parametersof “edge” decreased to equal 0.75 micrometer, “r” unchanged to equal 1micrometer, and “el” increased to equal 6.5 micrometer.

Similarly, an example multi-state pattern is embodied by, or comprises,a tertiary non-repeating full field random pattern having the parametersof “edge” equal to 1 micrometer, “r” equal to 1.5 micrometer, and “shiftper” equal to 2.5 micrometer is associated with a margin of 29.6%. Thismargin increases to 32.7% for a particular multi-state patterncomprising a tertiary non-repeating full field random pattern having theparameters of “edge” decreased to 0.75 micrometer, “r” unchanged toequal 1 micrometer, and “shift per” increased to equal 2.75 micrometer.

Each non-repeating full field random pattern may be associated with oneor more parameters representing the layout of the features in thenon-repeating full field random pattern. Each parameter adjusts thefeatures and/or layout of the non-repeating full field random pattern.The parameter set may be adjusted such that margin is improved, forexample at a particular desired distance. For example, in someembodiments, the length of an elongated feature may be improved todifferentiate it from a circular feature, improving the margin. Thelength may be increased until a threshold length at which neighboringfeatures become likely to overlap or introduce noise between thefeatures, which makes feature identification and separation by thesystem less accurate. In this regard, the pattern parameters may betuned, for example by a user, to determine such thresholds and set eachparameter to an optimal value based on the threshold(s).

FIG. 11B, for example, depicts a table illustrating the margins atdifferent non-repeating full field sizes for a binary non-repeating fullfield random pattern having a certain parameter set and the particularmulti-state pattern comprising a tertiary non-repeating full fieldrandom pattern having a second parameter set. As illustrated, the binarynon-repeating full field random pattern is associated with a 19.2%margin at a focus distance associated with a particular 3D objectdimensioning apparatus or device, camera, and/or image capture module,17.94% at 500 mm, 19.23% at 1000 mm, 20.03% at 2500 mm, and 20.27% at4500 mm. Similarly, a tertiary non-repeating full field random patternis associated with a 32.7% margin at a focus distance associated withthe particular 3D object dimensioning apparatus or device, camera,and/or image capture module, 32.0% at 500 mm, 32.66% at 1000 mm, 33.26%at 2500 mm, and 33.47% at 4500 mm. In this regard, the margin may beoptimized to improve the efficiency of pattern identification,searching, and matching while minimizing a pattern mismatch risk. Forexample, a higher length parameter (e.g., greater elongation of afeature) or higher shift can improve margin but excessive elongation orshift (e.g., more than a corresponding threshold) may cause adimensioning system and/or image processing system to experience moremismatch errors of neighboring features. Similarly, a higher radiusand/or higher width may improve feature identification, but excessiveradius or width (e.g., more than a corresponding threshold) maysimilarly cause a dimensioning system and/or image processing system toexperience more mismatch errors between neighboring features.Additionally, in some contexts, parameters may be tuned based onexternal considerations and/or regulatory constraints, such as eyesafety regulatory constraints that limit the total energy associatedwith each feature.

FIG. 12 illustrates an example identical patterns associated with aninterlaced dual-pattern, in accordance with an example embodiment of thepresent disclosure. The patterns depicted may be projected to a fullprojection field, for example to form the interlaced dual-patterndepicted. It should be appreciated that the interlaced dual-pattern maybe used for 3D object dimensioning, for example via one or moremathematical transformations based on the interlaced dual-pattern. Insome embodiments, 3D object dimensioning is performed via the processdescribed above with respect to FIG. 4 and/or utilization of Formula 1.

FIG. 12 specifically depicts a first, left pattern 1202 and a second,right pattern 1204. The left pattern 1202 and the right pattern 1204include identical features. In the example embodiment depicted, thefeatures comprise an elongated horizontal line and a dot, either ofwhich may represent a 1 and the other of which may represent a zero. Forexample, in some embodiments, the elongated horizontal line represents 1and the dot represents 0.

The left pattern 1202 and the right pattern 1204 may be projected toform interlaced dual-pattern 1252. The interlaced dual-pattern 1252 maybe projected by a projecting apparatus, such as projecting apparatus 700and/or non-repeating full field apparatus 900. In some embodiments, forexample, the left pattern 1202 is projected via a first, left patterngenerator of a projecting apparatus embodied by apparatus 700 and theright pattern 1204 is projected via a second, right pattern generator ofthe projecting apparatus embodied by apparatus 700. The patterngenerators may enable generation of the identical first pattern 1202 andsecond pattern 1204 from separate projector means using a first lightbeam and a second light beam produced via a light splitting component,for example a beam splitter. In some embodiments, the pattern generatorsmay receive the first light beam generated by a first projector and thesecond light beam generated by a second projector. In some suchembodiments, the first projector may be configured together with acorresponding first pattern generator (e.g., a first, left diffractivepattern generator) and the second projector may be configured togetherwith a corresponding second pattern generator (e.g., a second, leftdiffractive pattern generator) such that a light splitting component isnot required.

The first, left pattern generator that produces the left pattern 1202may be spaced a set distance (or in other embodiments, a variabledistance) from the second, right pattern generator that produces theright pattern 1204. In this regard, the interlaced dual-pattern may onlyappear aligned at or above a threshold distance. The left pattern 1202and the right pattern 1204 may be visibly misaligned at or closer thanthe threshold distance, for example resulting in the misalignedinterlaced dual-pattern 1254. In some embodiments, a 3D objectdimensioning apparatus, device, system, or component thereof, such as acamera, imaging assembly, or image capture device, is placed and/oroperated at or above the threshold distance from the full projectionfield and/or an object within the full projection field to enable 3Ddimensioning of an object. If misaligned interlaced dual-pattern 1254 isdetected, the system may generate and/or output an error that indicatesto the user and/or informs the user that the system, device, apparatus,or the like, should be moved to a threshold distance to reduce thelikelihood of mismatch errors.

The patterns may form a particular encoded pattern. For example, thefeatures may include a particular set of features corresponding to abinary string arranged via the patterns. The encoded pattern may beparsed and/or identified via the interpreted features. The encodedpatterns may then be compared to determine where in the pattern thecaptured segment is, for example using local encoded pattern matching tofind a sequence match between the left (or a first) pattern and theright (or a second) pattern. Additionally or alternatively, anapparatus, device, system, or the like may retrieve, receive, and/orotherwise identify a full encoded sequence. In at least someembodiments, the sequence may be sequential, such that identifying aparticular sub-portion of the sequence enables the apparatus toefficiently identify where the sub-portion is located in the fullpattern associated with the full encoded sequence. A non-repeatingfull-field pattern may represent an encoded pattern with a randomizedsequence to improve the uniform light density distribution whilemaintaining the ability to correlate the left and right patterns.

The interlaced dual-pattern may provide various advantages overconventional patterns. Specifically, in some embodiments, the interlaceddual-pattern uses a particular base offset between rows of featuresbetween the first and second patterns. In some such embodiments, thefirst and second pattern may minimize or eliminate the risk of patternoverlap.

Other embodiments may produce and utilize different left, right, and/orinterlaced dual-patterns. FIG. 13 illustrates other example patternsassociated with another interlaced dual-pattern in accordance with anexample embodiment of the present disclosure. The patterns may similarlybe projected to a full projection field, for example to form theinterlaced dual-pattern depicted.

The first, left pattern 1302 comprises features having horizontalelongated lines and vertical elongated lines. Specifically in theembodiment depicted, the horizontal elongated line represents a 0 andthe vertical elongated line represents a 1. The second, right pattern1304 comprises features having two elongated lines at opposite 45-degreeangles from a base axis (e.g., one at a negative 45-degree angle from abase axis and the second at a positive 45-degree angle from a baseaxis), where the positive 45-degree elongated line represents a 1 andthe negative 45-degree elongated line represents a 0, for example.

The first, left pattern 1302, for example, may be generated by a first,left pattern generator of a projection apparatus such as apparatus 700.The second, right pattern 1304 may be generated by a second, rightpattern generator of the projection apparatus embodied by apparatus 700.In such embodiments, the left pattern generator and the right patterngenerator may utilize different orientation pattern masks to generatethe left pattern 1302 and right pattern 1304, respectively. In someembodiments, the masks and subsequently left pattern 1302 and rightpattern 1304 may be associated with a baseline offset. The left pattern1302 and the right pattern 1304 may be projected to form interlaceddual-pattern 1352 comprising the features of both the left pattern 1302and the right pattern 1304, as well as an associated offset.

The interlaced dual-pattern 1352 may represent a full projection field.The interlaced dual-pattern 1352 may not repeat such that each portionof the interlaced dual-pattern 1352 is unique. The interlaceddual-pattern 1352 may span a particular full projection field having aparticular area.

The interlaced dual-pattern 1352 may be interpreted utilizing imageprocessing, for example by using one or more algorithms for directionalfiltering (for example, by applying a particular filter corresponding tothe feature of the left pattern and a second filter corresponding to thefeature of the right pattern) or other detection algorithms and/ordecoding algorithms. For example, the interlaced dual-pattern 1352 maybe interpreted by a dimensioning apparatus, camera, imaging assembly, orthe like comprising and/or associated with a processor or processingcircuitry and/or associated software. The left pattern 1302 may beparsed using a first directional filter set, for example a verticalfilter and a horizontal filter. The right pattern 1304 may be parsedusing a second directional filter set, for example using a firstnegative 45-degree filter and a second positive 45-degree filter. Otherembodiments may utilize alternative interlaced dual-patterns and/orcombined patterns, of which some may be more easily detectable and/orparsable using directional filtering or other detection algorithms thanothers. The filters may be used to generate a first, left encodedpattern for the left pattern and a second, right encoded pattern for theright pattern. In some embodiments, a coded pattern sequence matchingalgorithm may be used to match the portion of the two patterns. Forexample, in some embodiments, local encoded pattern matching can bedirectly performed between the two patterns.

FIG. 14 illustrates example left and right patterns and a correspondingcomplemented dual-pattern, in accordance with an example embodiment ofthe present disclosure. The patterns depicted may be projected to a fullprojection field, for example to form the complemented dual-patterndepicted. It should be appreciated that the complemented dual-patternmay be used for 3D objection dimensioning, for example via one or moremathematical transformations based on the complemented dual-pattern. Insome embodiments, 3D object dimensioning is performed via the processdescribed above with respect to FIG. 4.

FIG. 14 specifically depicts a first, left pattern 1402 and a second,right pattern 1404. The left pattern 1402 may, for example, be producedby a first, left pattern generator. The right pattern 1404 may, forexample, be produced by a second, right pattern generator. The leftpattern generator may be associated with a left pattern mask and theright pattern generator may be associated with a right pattern mask, togenerate the corresponding left and right patterns. In some embodiments,the left and right pattern mask may generate identical patternscomprising the different features. For example, a first light beamorientation may produce the left pattern 1402 and a second light beamorientation may produce the right pattern 1404.

The left pattern 1402 includes dot features having a first orientation,for example dot features 1406. The right pattern 1404 includes dotfeatures having a second orientation, for example dot features 1408. Thefirst orientation may, for example, be rotated 90 degrees from thesecond orientation. In this regard, the first features and the secondfeatures may be parsable and/or separable via image processing. Forexample, the first dot features may be associated with a first filterfor use in identifying the first dot features, and the second dotfeatures may be associated with a second filter for use in identifyingthe second dot features.

The left pattern 1402 and the right pattern 1404 may be projected to afull projection field. For example, the left pattern 1402 and the rightpattern 1404 may be projected to form the complemented pattern 1410. Thecomplemented pattern 1410 may represent a non-repeating full fielddual-pattern projected onto a full projection field. The complementedpattern 1410 may be configured such that the complemented pattern 1410forms a unique pattern throughout the full projection field (e.g.,without repetition of a particular sub-pattern, segment or slice of thepattern, or the like).

In some embodiments, a dimensioning apparatus, camera, image capturedevice, and/or processing circuitry, may be configured for imageprocessing to separate the complemented dual-pattern 1410 and identifythe left pattern 1402 and the right pattern 1404. As depicted, thecomplemented dual-pattern comprises, or otherwise is formed from,features 1412. Features 1412 may comprise the first features 1406 andthe second features 1408 based on the first pattern 1402 and the secondpattern 1404. The dimensioning apparatus, camera, image capture device,and/or processing device, for example, may detect the left pattern 1402by detecting and/or parsing the first, left features 1406 usingdirectional filtering and/or other feature detection algorithms.Additionally or alternatively, the dimensioning apparatus, camera, imagecapture device and/or processing device may detect the right pattern1404 by detecting and/or parsing the second, right features 1408 usingdirectional filtering and/or other feature detection algorithms.

Alternatively, in other embodiments, the left filtering kernel may beassociated with a larger encoding, such as:

0 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 0

The encoded representation of the right filtering kernel associated withthe right dot features 1408 may be rotated similarly to the rotation ofthe right features 1408 with respect to the left features 1406. In thisregard, for example, the encoded representation may be rotated 90degrees. For example, the right filtering kernel may be represented as:

1 0 0 0 1 0 0 0 1

Alternatively, in other embodiments where the right filtering kernel isassociated with a larger encoding, the right filtering kernel may berepresented as:

1 0 0 0 0 0 1 0 0 0 0 0 1 0 0 0 0 0 1 0 0 0 0 0 1

To identify the left and right patterns 1404, each filtering kernel maybe applied to the complemented dual-pattern 1410 associated with afiltering threshold. The filtering threshold may be used to determinewhether a particular application of the filtering kernel to a portion ofthe complemented dual-pattern indicates the portion of the complementeddual-pattern includes the feature corresponding to the filtering kernel.As the filtering threshold increases, the filtering kernel may satisfythe filtering threshold when more pixels match between the encoding ofthe portion of the pattern being analyzed and the filtering kernel. Insome embodiments, each application of the filtering kernel to a capturedportion may be used to determine a filtering match count for comparisonto the filtering threshold. For example, the filtering match count maybe calculated based on the sum of the matching activated pixels betweenthe filtering kernel and the captured portion. For example, in someembodiments, a filtering threshold of 2 may be used to separate thecomplemented dual-pattern into left pattern 1402 and right pattern 1404.In a circumstance where separating the features of the left pattern fromthe features of the right pattern involves more precise featuredistinguishing, a filtering threshold of 4 (or higher in someembodiments) may be used.

It should be appreciated that the example dot features depicted areexamples and that, in other embodiments, other dot features maysimilarly be used. In this regard, the dot features should not be takento limit the scope and spirit of this disclosure. Similarly, thefiltering kernels described above with respect to the left dot features1406 and right dot features 1408 are merely examples. In this regard,the alternative filtering kernels may be used. Further, the specificfiltering kernels described may be enhanced, condensed, expanded,transformed, or otherwise manipulated. The specific dot featurefiltering kernels disclosed should not be taken to limit the scope andspirit of this disclosure.

The complemented dual-pattern may provide various advantages overconventional patterns. Specifically, in some embodiments, thecomplemented dual-pattern includes specific pattern dot features for thefirst pattern and second dot features for the second pattern. Thefeatures may be readily identified and separated to form the twoseparate patterns. In some such embodiments, the first and secondpatterns improve the efficiency of pattern identification and patternseparation.

Other embodiments may produce a different left pattern, right pattern,or complemented pattern. FIG. 15 illustrates other example left andright patterns associated with another complemented dual-pattern inaccordance with an example embodiment of the present disclosure. Thepatterns may similarly be projected to a full projection field, forexample to form the complemented dual-pattern depicted.

The left pattern 1502 comprises the first features 1506. Specifically,the first features comprise, or are otherwise represented by, thefeature type of open circles. The right pattern 1504 comprises thesecond features 1508. Specifically, the second feature 1508 comprise, orare otherwise represented by, the feature type of closed circles. Eachof the left feature 1506 and the right feature 1508 may be detectableand/or parsable using one or more image processing, detection, orsimilar algorithms. It should be appreciated that in other embodiments,alternative feature that are detectable and/or parsable may be utilized.

The complemented pattern 1510 comprises the first, left pattern 1502 andthe second, right pattern 1504. The left pattern 1502 and the rightpattern 1504 may be offset by a predefined base offset. In someembodiments, the complemented pattern 1510 may be produced, for examplevia a first, left pattern generator and a second, right patterngenerator of an example projection apparatus, for example embodied byapparatus 700, onto a full projection field.

FIG. 16 illustrates a first pattern and second pattern orientatedassociated with a pattern pitch. The first pattern and second patternform an interlaced dual-pattern associated with a pattern pitch. Thepattern pitch may define a grid of depth points for orientating thefirst pattern and the second pattern to form the interlaceddual-pattern.

Specifically, as depicted with respect to FIG. 16, the first, leftpattern 1612A may be associated with a 3-state non-repeating full fieldpattern. The left pattern 1612A comprises various features representingvarious values. For example, the left pattern 1612A comprises singleelliptical feature 1602A, double elliptical feature 1604A, and tripleelliptical feature 1606A. Each of the features may represent aparticular value, for example single elliptical feature 1602A mayrepresent 1, double elliptical feature 1604A may represent 0, and tripleelliptical feature 1606A may represent −1.

The second, right pattern 1612B may similarly be associated with a3-state non-repeating full field pattern. The right pattern 1612Bcomprises various features representing various values. For example, theright pattern 1612B comprises a second single elliptical feature 1602B,second double elliptical feature 1604B, a second triple ellipticalfeature 1606B. These features may correspond to transformed versions ofthe features 1602A-1606A. For example, the features associated with leftpattern 1612A may be rotated 90 degrees from the features associatedwith right pattern 1612B. Each of the features may be detectable and/orparsable using one or more image processing, detection, and/or parsingalgorithms. For example, each of the features 1602A-1606A and1602B-1606B may be detectable utilizing one or more directionalfiltering algorithms.

Each pattern may be associated with a sensor pixel grid, for example thesensor pixel grid 1608. Similarly, each pattern may be associated with apattern pitch 1610. Each feature may be aligned based on the patternpitch 1610. Each feature covers a minimum area of sensor pixels from thesensor pixel grid 1608, for example associated with a particular camera,image capture apparatus, or the like, which may be used for imagecapture and/or detection.

The left pattern 1612A, for example, may include a particular patternarrangement of features as depicted. The features correspond to thebinary pattern representation 1614. The right patter 1612B may similarlycorrespond to the binary pattern representation 1614. The binary patternrepresentation 1614 may be used to detect, parse, and/or decode the leftpattern 1612A and/or the right pattern 1612B.

Left pattern 1612A and right pattern 1612B may be orientated andprojected to match the pattern pitch 1610, for example to forminterlaced dual-pattern 1616. In this regard, the location of eachfeature of the left pattern 1612A and the right pattern 1612B falls on adefined point associated with the pattern pitch 1610. Interlaceddual-pattern 1616 is associated with a plurality of depth points definedbetween the features of the interlaced dual-pattern 1616. The depthpoints may be utilized to calculate depth data associated with an objectfor 3D object dimensioning.

In other embodiments, one or more patterns may utilize an off-pitchpattern. As depicted with respect to FIG. 17, an interlaced dual-patternmay embody an off-pitch pattern associated with a first, left patternand a second, right pattern.

For example, the first, left pattern 1710A, the second, right pattern1710B, and the interlaced off-pitch dual-pattern 1714 are associatedwith a particular pattern pitch 1708. The pattern pitch 1708 enablesorientation of the left pattern 1710A and the right pattern 1710B. Thepattern pitch may similarly be associated with the sensor pixel grid1706. Each feature placement orientated to match, such as by aligningwith, the pattern pitch 1708 covers a particular portion of the sensorpixel grid 1706.

The left pattern 1710A and right pattern 1710B may embody binarynon-repeating full field patterns, such that the features associatedwith each pattern only have two possible states, for example. Asdepicted, left pattern 1710A may comprise single elliptical feature1702A and double elliptical feature 1704A. Similarly, right pattern1710A may comprise the second elliptical feature 1702B and second doubleelliptical feature 1704B.

The features may, in some patterns, be orientated off of the patternpitch based on a particular off-pitch offset. For example, the off-pitchoffset may represent half the length and/or height of a particularelement of the pattern pitch, such that a feature may fall halfwaybetween two grid elements of a pattern pitch. In such embodiments, themid-grid feature orientating may be utilized to create more depth datapoints. For example, each an elliptical of a double elliptical feature604A or 604B may be used in determining the displacement with respect toa neighboring feature. For example, both ellipticals of a doubleelliptical feature may be used to determine a displacement between bothellipticals of a neighboring double elliptical feature.

For example, the left pattern 1710A and the right pattern 1710B may eachbe associated with the binary pattern representation 1712. The binarypattern representation 1712 may be utilized to detect, parse, decode,and/or otherwise process the patterns, such as when the patterns areproduced and orientated to form interlaced dual-pattern 1714. Theinterlaced dual-pattern 1714 may utilize mid-grid feature orientating tocreate additional depth points for use in 3D object dimensioning.

In the specification and/or figures, typical embodiments of thedisclosure have been disclosed. The present disclosure is not limited tosuch exemplary embodiments. The use of the term “and/or” includes anyand all combinations of one or more of the associated listed items. Thefigures are schematic representations and so are not necessarily drawnto scale. Unless otherwise noted, specific terms have been used in ageneric and descriptive sense and not for purposes of limitation.

What is claimed is:
 1. A computer-implemented method of analyzing adual-pattern, the computer-implemented method comprising: projecting afull-field dual-pattern to a full projection field using a singleoptical element, the full-field dual-pattern comprising a full-fieldleft pattern and a full-field right pattern associated with a baselineoffset, wherein the single optical element comprises: a light splitterthat produces a first light beam and a second light beam from a sourcelight beam, a first beam bender that relays the first light beamutilized to generate the full-field left pattern, and a second beambender that relays the second light beam utilized to generate thefull-field right pattern, wherein the single optical element causessimultaneous projection of the full-field right pattern and thefull-field left pattern, and wherein the full-field right pattern andthe full-field left pattern are generated without using a mask;detecting the full-field left pattern using a first directional filter;detecting the full-field right pattern using a second directionalfilter; and dimensioning an object included in the full projection fieldbased on the detected full-field left pattern, the detected full-fieldright pattern, and the baseline offset.
 2. The computer-implementedmethod of claim 1, wherein the full-field left pattern comprises leftfeatures associated with a left feature type and the full-field rightpattern comprises right features associated with a right feature type,wherein the first directional filter matches the left feature type, andwherein the second directional filter matches the right feature type. 3.The computer-implemented method of claim 1, wherein dimensioning theobject comprises: identifying a portion of the full-field left pattern;identifying a portion of the full-field right pattern matching theportion of the full-field left pattern; determining a dimensioningoffset between features of the portion of the full-field left patternand features of the portion of the full-field right pattern; andcalculating at least one dimension parameter based on the dimensioningoffset and the baseline offset.
 4. The computer-implemented method ofclaim 3, wherein identifying the portion of the full-field right patternmatching the features of the portion of the full-field left patterncomprises: determining an left encoded pattern for the portion of thefull-field left pattern; and detecting, using a local area coded featurematching algorithm, the portion of the full-field right patternrepresenting a right encoded pattern, wherein the left encoded patternmatches the right encoded pattern.
 5. The computer-implemented method ofclaim 1, wherein the baseline offset is associated with a fixed pitchgrid.
 6. The computer-implemented method of claim 1, whereindimensioning the object comprises: detecting a left local area patternportion and a right local area pattern portion using a local areapattern correlation algorithm, wherein a left feature set of the leftlocal area pattern portion corresponds to a right feature set of theright local area pattern portion; determining a dimensioning offsetbetween the left feature set of the left local area pattern portion andthe right feature set of the right local area pattern portion; andcalculating at least one dimension parameter based on the dimensioningoffset and the baseline offset.
 7. The computer-implemented method ofclaim 1, wherein the full-field right pattern is projected from a firstposition and the full-field left pattern is projected from a secondposition, the first position different from the second position toseparate the full-field right pattern and the full-field left pattern bythe baseline offset.
 8. The computer-implemented method according toclaim 1, wherein the single optical element further comprises a lightcollimator that produces the source light beam from an incoming lightsource, wherein the source light beam represents a first featureutilized to produce the full-field left pattern and the full-field rightpattern.
 9. The computer-implemented method according to claim 1,wherein the first beam bender relays the first light beam to a firstprojection optical component of the single optical element that producesthe full-field left pattern and wherein the second beam bender relaysthe second light beam to a second projection optical component of thesingle optical element that produces the full-field right pattern,wherein the first projection optical component and the second projectionoptical component are separated along an axis by the first beam benderand the second beam bender to define the baseline offset.
 10. Anapparatus for analyzing a dual-pattern, the apparatus comprising atleast one processor and at least one memory, the at least one memoryhaving computer-coded instructions therein, the computer-codedinstructions, in execution with the at least one processor, configurethe apparatus to: project a full-field dual-pattern to a full projectionfield using a single optical element, the full-field dual-patterncomprising a full-field left pattern and a full-field right patternassociated with a baseline offset, wherein the single optical elementcomprises: a light splitter that produces a first light beam and asecond light beam from a source light beam, a first beam bender thatrelays the first light beam utilized to generate the full-field lightpattern, and a second beam bender that relays the second light beamutilized to generate the full-field right pattern, wherein the singleoptical element causes simultaneous projection of the full-field rightpattern and the full-field left pattern, and wherein the full-fieldright pattern and the full-field left pattern are generated withoutusing a mask; detect the full-field left pattern using a firstdirectional filter; detect the full-field right pattern using a seconddirectional filter; and dimension an object included in the fullprojection field based on the detected full-field left pattern, thedetected full-field right pattern, and the baseline offset.
 11. Theapparatus of claim 10, wherein the full-field left pattern comprisesleft features associated with a left feature type and the full-fieldright pattern comprises right features associated with a right featuretype, wherein the first directional filter matches the left featuretype, and wherein the second directional filter matches the rightfeature type.
 12. The apparatus of claim 10, wherein to dimension theobject, the apparatus is configured to: identify a portion of thefull-field left pattern; identify a portion of the full-field rightpattern matching the portion of the full-field left pattern; determine adimensioning offset between features of the portion of the full-fieldleft pattern and features of the portion of the full-field rightpattern; and calculate at least one dimensioning parameter based on thedimensioning offset and the baseline offset.
 13. The apparatus of claim12, wherein to identify the portion of the full-field right patternmatching the features of the portion of the full-field left pattern, theapparatus is configured to: determine an left encoded pattern for theportion of the full-field left pattern; and detect, using a local areacoded feature matching algorithm, the portion of the full-field rightpattern representing a right encoded pattern, wherein the left encodedpattern matches the right encoded pattern.
 14. The apparatus of claim10, wherein the baseline offset is associated with a fixed pitch grid.15. The apparatus of claim 10, wherein to dimension the object, theapparatus is configured to: detect a left local area pattern portion anda right local area pattern portion using a local area patterncorrelation algorithm, wherein a left feature set of the left local areapattern portion corresponds to a right feature set of the right localarea pattern portion; determine a dimensioning offset between the leftfeature set of the left local area pattern portion and the right featureset of the right local area pattern portion; and calculate at least onedimension parameter based on the dimensioning offset and the baselineoffset.
 16. A computer program product for analyzing a dual-pattern, thecomputer program product comprising at least one non-transitorycomputer-readable storage medium having computer program instructionsthereon, the computer program instructions, when in execution with aprocessor, configured to: project a full-field dual-pattern to a fullprojection field using a single optical element, the full-fielddual-pattern comprising a full-field left pattern and a full-field rightpattern associated with a baseline offset, wherein the single opticalelement comprises: a light splitter that produces a first light beam anda second light beam from a source light beam, a first beam bender thatrelays the first light beam utilized to generate the full-field leftpattern, and a second beam bender that relays the second light beamutilized to generate the full-field right pattern, wherein the singleoptical element causes simultaneous projection of the full-field rightpattern and the full-field left pattern, and wherein the full-fieldright pattern and the full-field left pattern are generated withoutusing a mask; detect the full-field left pattern using a firstdirectional filter; detect the full-field right pattern using a seconddirectional filter; and dimension an object included in the fullprojection field based on the detected full-field left pattern, thedetected full-field right pattern, and the baseline offset.
 17. Thecomputer program product of claim 16, wherein the full-field leftpattern comprises left features associated with a left feature type andthe right pattern comprises right features associated with a rightfeature type, wherein the first directional filter matches the leftfeature type, and wherein the second directional filter matches theright feature type.
 18. The computer program product of claim 16,wherein to dimension the object, the computer program product isconfigured to: identify a portion of the full-field left pattern;identify a portion of the full-field right pattern matching the portionof the full-field left pattern; determine a dimensioning offset betweenfeatures of the portion of the full-field left pattern and features ofthe portion of the full-field right pattern; and calculate at least onedimensioning parameter based on the dimensioning offset and the baselineoffset.
 19. The computer program product of claim 18, wherein toidentify the portion of the full-field right pattern matching thefeatures of the portion of the full-field left pattern, the computerprogram product is configured to: determine an left encoded pattern forthe portion of the full-field left pattern; and detect, using a localarea coded feature matching algorithm, the portion of the full-fieldright pattern representing a right encoded pattern, wherein the leftencoded pattern matches the right encoded pattern.
 20. The computerprogram product of claim 16, wherein to dimension the object, thecomputer program product is configured to: detect a left local areapattern portion and a right local area pattern portion using a localarea pattern correlation algorithm, wherein a left feature set of theleft local area pattern portion corresponds to a right feature set ofthe right local area pattern portion; determine a dimensioning offsetbetween the left feature set of the left local area pattern portion andthe right feature set of the right local area pattern portion; andcalculate at least one dimensioning parameter based on the dimensioningoffset and the baseline offset.